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| rdfs:label | "Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation...(more)" |
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| schema:creator | <https://jpsearch.go.jp/entity/ncname/Lebedev_Alexander_A.> (➜ "Lebedev Alexander A.") |
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| schema:creator | <https://jpsearch.go.jp/entity/ncname/Ivanov_Pavel_A.> (➜ "Ivanov Pavel A.") |
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| schema:creator | <https://jpsearch.go.jp/entity/ncname/Davydov_Sergey_Yu.> (➜ "Davydov Sergey Yu.") |
| schema:datePublished | "2013" |
| schema:description 5 | "資料種別: Hardback" |
| schema:description | "分類: BIC:TGM" |
| schema:description | "備考: The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from "Bulk growth" to "Device and application". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition. (Nielsen Book)...(more)" |
| schema:description | "責任表示: edited by Alexander A. Lebedev ... [et al.]" |
| schema:description | "注記: Includes bibliographical references and index" |
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| schema:isbn | "9783037856246" |
| schema:issn | "02555476" |
| schema:numberOfPages | "xxiii, 1149 p." |
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| schema:size | "25 cm" |
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